IRF520 common transistor

IRF520 Military/High-Rel:NV(BR)DSS (V):100V(BR)GSS (V):20I(D) Max. (A):9.2#I(DM) Max. (A) Pulsed I(D):6.5@Temp (¸C):100IDM Max (@25¸C Amb):37#Absolute Max. Power Diss. (W):60#Minimum Operating Temp (¸C):-55µMaximum Operating Temp (¸C):150µThermal Resistance Junc-Case:2.5Thermal Resistance Junc-Amb.:80V(GS)th Max. (V):4V(GS)th (V) (Min):2@I(D) (A) (Test Condition):250uI(DSS) Max. (A):250u@V(DS) (V) (Test Condition):100@Temp (¸C) (Test Condition):25I(GSS) Max. (A):500n@V(GS) (V) (Test Condition):20r(DS)on Max. (Ohms):270m@V(GS) (V) (Test Condition):10@I(D) (A) (Test Condition):5.6g(fs) Min. (S) Trans. conduct.:2.7g(fs) Max; (S) Trans. conduct;:4.1‚@V(DS) (V) (Test Condition):50@I(D) (A) (Test Condition):5.6C(iss) Max. (F):350p‚@V(DS) (V) (Test Condition):25@Freq. (Hz) (Test Condition):1Mtd(on) Max (s) On time delay:13nt(r) Max. (s) Rise time:45nt(d)off Max. (s) Off time:29nt(f) Max. (s) Fall time.:30nPackage Style:TO-220ABMounting Style:TBVCES or Punch throughº Nota Bene: Image is not true representation of part