2N3904 Transistor
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2016-04-01
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2N3904 Transistor

2N3904 Military/High-Rel:NV(BR)CEO (V):40V(BR)CBO (V):60I(C) Max. (A):200mAbsolute Max. Power Diss. (W):350mMaximum Operating Temp (øC):150õI(CBO) Max. (A):50n÷@V(CBO) (V) (Test Condition):30h(FE) Min. Current gain.:100h(FE) Max. Current gain.:300@I(C) (A) (Test Condition):10m@V(CE) (V) (Test Condition):1.0f(T) Min. (Hz) Transition Freq:300M@I(C) (A) (Test Condition):10m@V(CE) (V) (Test Condition):20V(CE)sat Max. (V):.30@I(C) (A) (Test Condition):50m@I(B) (A) (Test Condition):5.0mh(fe) Min. SS Current gain.:2.5@I(C) (A) (Test Condition):10m@V(CE) (V) (Test Condition):20@Freq. (Hz) (Test Condition):100Mt(d) Max. (s) Delay time.:35nt(r) Max. (s) Rise time:35nt(s) Max. (s) Storage time.:200nt(f) Max. (s) Fall time.:50nPackage Style:TO-92Mounting Style:T¨ Nota Bene: Image is not true representation of part

  • BrandAmerican Microsemiconductor
  • EAN0844632032844
  • Feature2N3904 General Purpose Transistor. Collector-emitter Voltage: Vceo = 40V. Collector-base Voltage: Vcbo = 60V. Collector Dissipation: Pc(max) = 625mW.
  • LabelAmerican Microsemiconductor
  • ManufacturerAmerican Microsemiconductor
  • MPN2N3904
  • NumberOfItems1
  • PartNumber2N3904
  • ProductGroupBISS
  • ProductTypeNameELECTRONIC_COMPONENT
  • PublisherAmerican Microsemiconductor
  • StudioAmerican Microsemiconductor
  • Title2N3904 Transistor
  • UPC844632032844